rn2114mfv rn2118mfv 2009-04-17 1 type no. r1 (k ? )r2 (k ? ) rn2114mfv 1 10 RN2115MFV 2.2 10 rn2116mfv 4.7 10 rn2117mfv 10 4.7 rn2118mfv 47 10 toshiba transistor silicon pnp epitaxial type (pct process) rn2114mfv,RN2115MFV,rn2116mfv rn2117mfv,rn2118mfv switching applications inverter circuit applications interface circuit applications driver circuit applications z ultra-small package, suited to very high density mounting z incorporating a bias resistor into t he transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. z a wide range of resistor values is available for use in various circuits. z complementary to rn1114mfv to rn1118mfv equivalent circuit and bias resistor values absolute maximum ratings (ta = 25c) characteristic symbol rating unit collector-base voltage v cbo ?50 v collector-emitter voltage rn2114mfv to rn2118mfv v ceo ?50 v rn2114mfv ?5 RN2115MFV ?6 rn2116mfv ?7 rn2117mfv ?15 emitter-base voltage rn2118mfv v ebo ?25 v collector current i c ?100 ma collector power dissipation p c (note1) 150 mw junction temperature t j 150 c storage temperature range rn2114mfv to rn2118mfv t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note1 : mounted on fr4 board ( 25.4 mm 25.4 mm 1.6mmt ) jedec D jeita D toshiba 2-1l1a weight: 1.5 mg (typ.) unit: mm 1.base 2.emitter 3.collector vesm 1.2 0.05 0.32 0.05 1 2 3 0.4 0.4 0.22 0.05 0.8 0.05 0.8 0.05 1.2 0.05 0.5 0.05 0.13 0.05
rn2114mfv rn2118mfv 2009-04-17 2 land pattern example unit: mm electrical characteristics (ta = 25c) characteristic symbol test circuit test condition min typ. max unit i cbo v cb = ?50v, i e = 0 D D ?100 collector cut-off current rn2114mfv to 2118mfv i ceo D v ce = ?50v, i b = 0 D D ?500 na rn2114mfv v eb = ?5v, i c = 0 ?0.35 D ?0.65 RN2115MFV v eb = ?6v, i c = 0 ?0.37 D ?0.71 rn2116mfv v eb = ?7v, i c = 0 ?0.36 D ?0.68 rn2117mfv v eb = ?15v, i c = 0 ?0.78 D ?1.46 emitter cut-off current rn2118mfv i ebo D v eb = ?25v, i c = 0 ?0.33 D ?0.63 ma rn2114mfv to 16mfv, 18mfv 50 D D dc current gain rn2117mfv h fe D v ce = ?5v, i c = ?10ma 30 D D collector-emitter saturation voltage rn2114mfv to 2118mfv v ce(sat) D i c = ?5ma, i b = ?0.5ma D ?0.1 ?0.3 v rn2114mfv ?0.5 D ?2.0 RN2115MFV ?0.6 D ?2.5 rn2116mfv ?0.7 D ?2.5 rn2117mfv ?1.5 D ?3.5 input voltage (on) rn2118mfv v i (on) D v ce = ?0.2v, i c = ?5ma ?2.5 D ?10.0 v rn2114mfv ?0.3 D ?0.9 RN2115MFV ?0.3 D ?1.0 rn2116mfv ?0.3 D ?1.1 rn2117mfv ?0.3 D ?3.0 input voltage (off) rn2118mfv v i (off) D v ce = ?5v, i c = ?0.1ma ?0.5 D ?5.7 v collector output capacitance rn2114mfv to 2118mfv c ob D v cb = ?10v, i e = 0, f = 1mhz D 0.9 D pf rn2114mfv 0.7 1.0 1.3 RN2115MFV 1.54 2.2 2.86 rn2116mfv 3.29 4.7 6.11 rn2117mfv 7 10 13 input resistor rn2118mfv r1 D D 32.9 47 61.1 k ? rn2114mfv D 0.1 D RN2115MFV D 0.22 D rn2116mfv D 0.47 D rn2117mfv D 2.13 D resistor ratio rn2118mfv r1/r2 D D D 4.7 D 0.5 0.45 0.4 0.4 1.15 0.45 0.4
rn2114mfv rn2118mfv 2009-04-17 3 ic - vi(on) -0.1 -1 -10 -100 -0.1 -1 -10 input voltage vi(on) ( v) collector current ic (ma) 25 -25 ta = 100c common emitter vce = -0.2v rn2114mfv ic - vi(on) -0.1 -1 -10 -100 -0.1 -1 -10 input voltage vi(on) ( v) collector current ic (ma) 25 -25 common emitter vce = -0.2v ta = 100c RN2115MFV ic - vi(on) -0.1 -1 -10 -100 -0.1 -1 -10 -100 input voltage vi(on) ( v) collector current ic (ma) 25 -25 ta = 100c common emitter vce = -0.2v rn2116mfv ic - vi(on) -0.1 -1 -10 -100 -0.1 -1 -10 -100 input voltage vi(on) ( v) collector current ic (ma) 25 -25 common emitter vce = -0.2v ta = 100c rn2117mfv ic - vi(on) -0.1 -1 -10 -100 -1 -10 -100 input voltage vi(on) ( v) collector current ic (ma) 25 -25 common emitter vce = -0.2v ta = 100c rn2118mfv
rn2114mfv rn2118mfv 2009-04-17 4 ic - vi(off) -10 -100 -1000 -10000 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 input voltage vi(off) ( v) collector current ic ( a) 25 -25 ta = 100c common emitter vce = -5v rn2114mfv 0 ic - vi(off) -10 -100 -1000 -10000 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 input voltage vi(off) ( v) collector current ic ( a) 25 -25 common emitter vce = -5v ta = 100c RN2115MFV 0 ic - vi(off) -10 -100 -1000 -10000 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 input voltage vi(off) ( v) collector current ic ( a) 25 -25 ta = 100c common emitter vce = -5v rn2116mfv ic - vi(off) -10 -100 -1000 -10000 -0.8 -1.2 -1.6 -2 -2.4 -2.8 -3.2 input voltage vi(off) ( v) collector current ic ( a) 25 -25 common emitter vce = -5v ta = 100c rn2117mfv ic - vi(off) -10 -100 -1000 -10000 -1 -2 -3 -4 -5 -6 input voltage vi(off) ( v) collector current ic ( a) 25 -25 common emitter vce = -5v ta = 100c rn2118mfv
rn2114mfv rn2118mfv 2009-04-17 5 hfe - ic 10 100 1000 -1 -10 -100 collector current ic (ma) dc current gain hfe 25 -25 ta = 100c common emitter vce = -5v rn2114mfv hfe - ic 10 100 1000 -1 -10 -100 collector current ic (ma) dc current gain hfe 25 -25 common emitter vce = -5v ta = 100c RN2115MFV hfe - ic 10 100 1000 -1 -10 -100 collector current ic (ma) dc current gain hfe 25 -25 ta = 100c common emitter vce = -5v rn2116mfv hfe - ic 1 10 100 1000 -1 -10 -100 collector current ic (ma) dc current gain hfe 25 -25 common emitter vce = -5v ta = 100c rn2117mfv hfe - ic 10 100 1000 -1 -10 -100 collector current ic (ma) dc current gain hfe 25 -25 common emitter vce = -5v ta = 100c rn2118mfv
rn2114mfv rn2118mfv 2009-04-17 6 vce(sat) - ic -0.01 -0.1 -1 -1 -10 -100 collector current ic (ma) collector-emitter saturation voltage vce(sat) ( v) 25 -25 ta = 100c common emitter ic/ib = 10 rn2114mfv vce(sat) - ic -0.01 -0.1 -1 -1 -10 -100 collector current ic (ma) collector-emitter saturation voltage vce(sat) ( v) 25 -25 common emitter ic/ib = 10 ta = 100c RN2115MFV vce(sat) - ic -0.01 -0.1 -1 -1 -10 -100 collector current ic (ma) collector-emitter saturation voltage vce(sat) ( v) 25 -25 ta = 100c common emitter ic/ib =10 rn2116mfv vce(sat) - ic -0.01 -0.1 -1 -1 -10 -100 collector current ic (ma) collector-emitter saturation voltage vce(sat) ( v) 25 -25 common emitter ic/ib = 10 ta = 100c rn2117mfv vce(sat) - ic -0.01 -0.1 -1 -1 -10 -100 collector current ic (ma) collector-emitter saturation voltage vce(sat) ( v) 25 -25 common emitter ic/ib = 10 ta = 100c rn2118mfv
rn2114mfv rn2118mfv 2009-04-17 7 type name marking rn2114mfv RN2115MFV rn2116mfv rn2117mfv rn2118mfv yq ys yt yu yw
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